'Wrong bonds' in sputtered amorphous Ge2Sb2Te5

被引：72
作者：
Jovari, P.
Kaban, I.
Steiner, J.
Beuneu, B.
Schops, A.
Webb, A.
机构：
[1] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary
[2] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
[3] Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany
[4] CEA Saclay, Lab Leon Brillouin, F-91191 Gif Sur Yvette, France
[5] HASYLAB Deutschen Elekt Synchroton, DESY, D-22603 Hamburg, Germany
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 33期
关键词：
D O I：
10.1088/0953-8984/19/33/335212
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The structure of sputtered amorphous Ge2Sb2Te5 was investigated by high energy x-ray diffraction, neutron diffraction and Ge-, Sb- and Te K-edge EXAFS measurements. The five datasets were modelled simultaneously in the framework of the reverse Monte Carlo simulation technique. It was found that apart from Te-Sb and Te-Ge bonds existing in the crystalline phases, Ge Ge and Sb- Ge bonding is also significant in sputtered amorphous Ge2Sb2Te5. According to our results, all components obey the '8-N' rule.
引用
收藏
页数：9
相关论文
共 50 条
[41]   Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad [J].
何敖东 ;
刘波 ;
宋志棠 ;
吕业刚 ;
李俊焘 ;
刘卫丽 ;
封松林 ;
吴关平 .
Journal of Semiconductors, 2013, 34 (07) :170-174
[42]   Raman Study on the Crystallization Characteristics of Amorphous Ge2Sb2Te5 Film [J].
Zhu, Z. ;
Liu, F. R. ;
Huang, Y. N. .
ENGINEERING AND MANUFACTURING TECHNOLOGIES, 2014, 541-542 :229-233
[43]   Polymorphism of Amorphous Ge2Sb2Te5 Probed by EXAFS and Raman Spectroscopy [J].
Carria, E. ;
Mio, A. M. ;
Gibilisco, S. ;
Miritello, M. ;
d'Acapito, F. ;
Grimaldi, M. G. ;
Rimini, E. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (12) :H480-H482
[44]   Crystallization of amorphous Ge2Sb2Te5 films induced by an ultraviolet laser [J].
Zhou, W. P. ;
Liu, F. R. ;
Bai, N. ;
Wan, Y. H. ;
Lin, X. ;
Chen, J. M. .
APPLIED SURFACE SCIENCE, 2013, 285 :97-101
[45]   Defect states in amorphous Ge2Sb2Te5 phase change material [J].
Qamhieh, N. ;
Mahmoud, S. T. ;
Ayesh, A. I. .
CANADIAN JOURNAL OF PHYSICS, 2014, 92 (7-8) :619-622
[46]   Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films [J].
Morales-Sánchez, E ;
Prokhorov, EF ;
Mendoza-Galván, A ;
González-Hernández, J .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :697-702
[47]   Influence of Silicon Doping on the Properties of Sputtered Ge2Sb2Te5 Thin Film [J].
Jeong, Seong-Min ;
Kim, Kyung-Ho ;
Choi, Soon-Mok ;
Lee, Hong-Lim .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[48]   Laser-induced crystallization behavior of the sputtered Ge2Sb2Te5 film [J].
Liu, B ;
Ruan, H ;
Gan, FX .
JOURNAL OF INORGANIC MATERIALS, 2002, 17 (03) :637-640
[49]   Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films [J].
Park, Seung Jong ;
Jang, Moon Hyung ;
Park, Sung Jin ;
Ahn, Min ;
Park, Dam Bi ;
Ko, Dae-Hong ;
Cho, Mann-Ho .
JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (32) :16527-16533
[50]   Segregation-induced Ge precipitation in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cells [J].
Xu, Qiyun ;
Lian, Enkui ;
Yeoh, Phoebe ;
Skowronski, Marek .
AIP ADVANCES, 2022, 12 (06)
12345