Electron scattering near an itinerant to localized electronic transition

被引:38
|
作者
Rivadulla, F [1 ]
Zhou, JS [1 ]
Goodenough, JB [1 ]
机构
[1] Univ Texas, Texas Mat Inst, ETC 9 102, Austin, TX 78712 USA
来源
PHYSICAL REVIEW B | 2003年 / 67卷 / 16期
关键词
D O I
10.1103/PhysRevB.67.165110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report an unconventional temperature dependence of the resistivity in several strongly correlated systems approaching a localized to itinerant electronic transition from the itinerant electron side. The observed (rho-rho(0))proportional toT(3/2) behavior over the entire range of materials discussed cannot be explained within the framework of existing theories. We propose a model in which the scattering of the conduction electrons by locally cooperative bond-length fluctuations in a matrix of vibronic and Fermi-liquid electrons can account for the experimental data.
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页数:6
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