HF Gate Drive Circuit for a Normally-On SiC JFET with Inherent Safety

被引：0

作者：

Takuno, Tsuguhiro ^{[1
]}

Hikihara, Takashi ^{[1
]}

Tsuno, Takashi ^{[2
]}

Hatsukawa, Satoshi ^{[2
]}

机构：

[1] Kyoto Univ, Nishikyo Ku, Kyoto, Japan

[2] Sumitomo Elect Ind Ltd, Kyoto, Japan

来源：

EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年

关键词：

Device application; High frequency power converter; High speed drive; JFET; New switching devices; Power semiconductor device; Power supply; Safety; SiC-device; Silicon Carbide;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A gate drive circuit for a silicon carbide (Sic) JFET is introduced from the standpoint of application to power conversion circuit. This gate drive circuit enables normally-on JFETs as close as normally-off devices at high switching frequency. The voltage and current responses of the implemented circuit are discussed under loads at the switching frequencies over 1 MHz.

引用

页码：1664 / +

页数：2