HF Gate Drive Circuit for a Normally-On SiC JFET with Inherent Safety

被引：0
|
作者：
Takuno, Tsuguhiro [1 ]
Hikihara, Takashi [1 ]
Tsuno, Takashi [2 ]
Hatsukawa, Satoshi [2 ]
机构：
[1] Kyoto Univ, Nishikyo Ku, Kyoto, Japan
[2] Sumitomo Elect Ind Ltd, Kyoto, Japan
来源：
EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年
关键词：
Device application; High frequency power converter; High speed drive; JFET; New switching devices; Power semiconductor device; Power supply; Safety; SiC-device; Silicon Carbide;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A gate drive circuit for a silicon carbide (Sic) JFET is introduced from the standpoint of application to power conversion circuit. This gate drive circuit enables normally-on JFETs as close as normally-off devices at high switching frequency. The voltage and current responses of the implemented circuit are discussed under loads at the switching frequencies over 1 MHz.
引用
收藏
页码：1664 / +
页数：2
相关论文
共 50 条
  • [1] Protection Circuit of Normally-on SiC JFET Using an Inrush Current
    Kim, Jong-Hyun
    Min, Byung-Duk
    Baek, Ju-Won
    Yoo, Dong-Wook
    INTELEC 09 - 31ST INTERNATIONAL TELECOMMUNICATIONS ENERGY CONFERENCE, 2009, : 1126 - 1129
  • [2] Design of a Forward-flyback Converter Based Drive with Gate Voltage Limitation for a DC Circuit Breaker Using Normally-on SiC JFET
    Thi Thuong Huyen Ma
    Tran, Thanh Kha
    Yahoui, Hamed
    Siauve, Nicolas
    Hoang Giang Vu
    2017 IEEE SECOND INTERNATIONAL CONFERENCE ON DC MICROGRIDS (ICDCM), 2017, : 18 - 23
  • [3] Performance Consideration of an AC Coupled Gate Drive Circuit With Forward Bias for Normally-On SiC JFETs
    Kampitsis, G.
    Papathanassiou, S.
    Manias, S.
    2013 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2013, : 3224 - 3229
  • [4] Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit
    Ishibashi, Takaharu
    Okamoto, Masayuki
    Hiraki, Eiji
    Tanaka, Toshihiko
    Hashizume, Tamotsu
    Kikuta, Daigo
    Kachi, Tetsu
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2015, 51 (03) : 2415 - 2422
  • [5] Evaluation of the drive circuit for a dual gate trench SiC JFET
    Rabkowski, Jacek
    Peftitsis, Dimosthenis
    Bakowski, Mietek
    Nee, Hans-Peter
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 946 - +
  • [6] Inherently safe DC/DC converter using a normally-on SiC JFET
    Kelley, RL
    Mazzola, MS
    Draper, WA
    Casady, J
    APEC 2005: Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, Vols 1-3, 2005, : 1561 - 1565
  • [7] CASCODE LIGHT - normally-on JFET stand alone performance in a normally-off Cascode circuit
    Domes, Daniel
    Zhang, Xi
    INTERNATIONAL EXHIBITION AND CONFERENCE FOR POWER ELECTRONICS, INTELLIGENT MOTION AND POWER QUALITY 2010 (PCIM EUROPE 2010), VOLS 1 AND 2, 2010, : 286 - 290
  • [8] Dynamic Behavior Analysis and Characterization of a Cascode Rectifier Based on a Normally-On SiC JFET
    Vazquez, A.
    Rodriguez, A.
    Sebastian, J.
    Maset, E.
    Ferreres, A.
    Sanchis, E.
    2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 1589 - 1596
  • [9] A Gate Drive Circuit for Normally-On SiC JFETs with Self-Protection Functions against Overcurrent and Shoot-Through Fault Conditions
    Giannoutsos, Spyridon V.
    Kokosis, Sotirios
    Manias, Stefanos N.
    2015 IEEE 15TH INTERNATIONAL CONFERENCE ON ENVIRONMENT AND ELECTRICAL ENGINEERING (IEEE EEEIC 2015), 2015, : 851 - 859
  • [10] A Comparison of 1200 V Normally-OFF & Normally-ON Vertical Trench SiC Power JFET Devices
    Casady, J. B.
    Sheridan, D. C.
    Kelley, R.
    Bondarenko, V.
    Ritenour, A.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 641 - +
12345