A Low Power Gate Level Full Adder Module

A standard cell based gate level synchronous full adder design is presented in this paper. The main highlight of the article is that the proposed full adder realization is found to be better in terms of power-delay product (PDP), even in comparison with the full adder element that has been made available as part of two commercial standard cell libraries viz, the high-speed 130nm Faraday (UMC) bulk CMOS process technology and the low V, but inherently power optimized 65nm STMicroelectronics bulk CMOS process. The fundamental ripple carry adder (RCA) topology is considered to demonstrate the power efficiency of our full adder module vis-a-vis many other recently proposed full adder module designs.