Comparison of carrier lifetime for InAs quantum dots in the quaternary barriers on InP substrate

被引：0
|
作者：
Park, J. [1 ]
Jang, Y. D. [1 ]
Lee, H. [1 ]
Lee, D. [1 ]
Pyun, S. H. [2 ]
Jeong, W. G. [2 ]
Jang, J. W.
Kim, J. S.
Oh, D. K.
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon, South Korea
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
quantum dot; carrier lifetime; band offset;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have found that the carrier lifetime of an InAs/InGaAsP quantum dot (QD) on an InP substrate is twice that of an InAs/InAlGaAs QD on the same substrate, although the ground-state energy levels and barrier heights of these QDs are comparable. The carrier lifetime of the IrLAs/InAlGaAs QD within the ground state PL band is shorter as the detection wavelength is longer. On the contrary, it shows the same carrier lifetime for the InAs/InGaAsP QD. The difference is interpreted in terms of the smaller conduction band-offset in InAs/InGaAsP QDs compared to InAs/InAlGaAs QDs.
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页码：887 / +
页数：2
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