A Fully Integrated 22.6dBm mm-Wave PA in 40nm CMOS

被引：0

作者：

Shirinfar, Farid ^{[1
,2
]}

Nariman, Med ^{[2
]}

Sowlati, Tirdad ^{[2
]}

Rofougaran, Maryam ^{[2
]}

Rofougaran, Reza ^{[2
]}

Pamarti, Sudhakar ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Los Angeles, CA 90095 USA

[2] Broadcom, Irvine, CA USA

来源：

2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2013年

关键词：

Differential amplifiers; millimeter wave integrated circuits; passive circuits; power amplifiers; transformer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated 60GHz CMOS PA with a P-SAT of 22.6dBm is presented. To our knowledge, this is the highest reported P-SAT at mm-waves in standard CMOS. To achieve a high power level, 32 differential PAs are combined through a network of transmission lines, Wilkinson combiners, and a multi-port argyle transformer. This method of combining minimizes loss while implementing a low impedance load (similar to 12 Omega) at the drains of each of the last stage PAs. Electromigration and other reliability issues are discussed.

引用

页码：279 / 282

页数：4