A Fully Integrated 22.6dBm mm-Wave PA in 40nm CMOS

被引：0
|
作者：
Shirinfar, Farid [1 ,2 ]
Nariman, Med [2 ]
Sowlati, Tirdad [2 ]
Rofougaran, Maryam [2 ]
Rofougaran, Reza [2 ]
Pamarti, Sudhakar [1 ]
机构：
[1] Univ Calif Los Angeles, Los Angeles, CA 90095 USA
[2] Broadcom, Irvine, CA USA
来源：
2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2013年
关键词：
Differential amplifiers; millimeter wave integrated circuits; passive circuits; power amplifiers; transformer;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated 60GHz CMOS PA with a P-SAT of 22.6dBm is presented. To our knowledge, this is the highest reported P-SAT at mm-waves in standard CMOS. To achieve a high power level, 32 differential PAs are combined through a network of transmission lines, Wilkinson combiners, and a multi-port argyle transformer. This method of combining minimizes loss while implementing a low impedance load (similar to 12 Omega) at the drains of each of the last stage PAs. Electromigration and other reliability issues are discussed.
引用
收藏
页码：279 / 282
页数：4
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