Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

被引：8

作者：

Moon, Jeong Hyun ^{[1
,2
]}

Yim, Jeong Hyuk ^{[1
,2
]}

Seo, Han Seok ^{[1
,2
]}

Lee, Do Hyun ^{[1
,2
]}

Kim, Chang Hyun ^{[1
,2
]}

Kim, Hyeong Joon ^{[1
,2
]}

Cheong, Kuan Yew ^{[3
]}

Bahng, Wook ^{[4
]}

Kim, Nam-Kyun ^{[4
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Coll Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Perai 14300, Penang, Malaysia

[4] Korea Electrotechnol Res Inst, Ctr Energy Efficient Semicond, Chang Won 641120, Gyungnam, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

alumina; Auger electron spectra; dielectric thin films; diffusion; electric breakdown; interface states; multilayers; nitridation; rapid thermal annealing; reliability; silicon compounds; transmission electron microscopy; ATOMIC LAYER DEPOSITION; HFO2; THIN-FILMS; ELECTRICAL-PROPERTIES; ELECTRONIC-PROPERTIES; RADIATION; SUBSTRATE;

D O I：

10.1063/1.3367891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we have reported electrical and physical properties of rapid thermal annealed (RTA) Al2O3 stacking dielectric on n-type 4H-SiC. The effects of SiN-reaction barrier layer (RBL) between Al2O3 and thermal-nitrided SiO2 on SiC-based metal-oxide-semiconductor characteristics have been investigated and compared. A significant reduction in oxide-semiconductor interface-trap density (D-it), improvement in dielectric breakdown field and reliability has been observed after the SiN-RBL has been introduced between Al2O3 and SiO2. High-resolution transmission electron microscope and Auger electron spectroscopy analyses reveal that the SiN-RBL suppresses Al diffusion into the nitrided SiO2 during RTA process.

引用

页数：3

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