Symmetric and asymmetric GaAs/Al0.3Ga0.7As double quantum well subjected to hydrostatic pressure and applied electric field

被引：14
作者：
Morales, AL
Raigoza, N
Montes, A
Porras-Montenegro, N
Duque, CA [1 ]
机构：
[1] Univ Antioquia, Inst Fis, Medellin AA 1226, Colombia
[2] Univ Valle, Dept Fis, Cali AA 25360, Colombia
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 14期
关键词：
D O I：
10.1002/pssb.200405224
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The combined electric field and hydrostatic pressure effects on the binding energy of a shallow-donor impurity in symmetrical and asymmetrical GaAs/Al0.3Ga0.7As double quantum wells are calculated using a variational procedure within the effective-mass approximation. Double quantum wells are examinated considering impurities situated at the well centers. Due to the applied electric field both structures become asymmetric from the impurity potential point of view. According to the dimensions the structures are symmetric (equal well lengths) and asymmetrical (different well lengths). (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3224 / 3230
页数：7
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