Spin relaxation and antisymmetric exchange in n-doped III-V semiconductors -: art. no. 033203

被引：32

作者：

Gor'kov, LP ^{[1
]}

Krotkov, PL

机构：

[1] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[2] Russian Acad Sci, LD Landau Theoret Phys Inst, Moscow 117334, Russia

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.67.033203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently, Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in n-doped GaAs in the regime close to the metal-insulator transition. We derive the correct spin Hamiltonian and apply it to the determination of spin dephasing time using the method of moments expansion. Our estimates would give longer than the observed values of the spin-relaxation time.

引用

页数：4

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