Strain-Mediated Spin-Orbit Torque Enhancement in Pt/Co on Flexible Substrate

被引：19

作者：

Wong, Grayson Dao Hwee ^{[1
,2
]}

Xu, Zhan ^{[1
,3
]}

Gan, Weiliang ^{[1
]}

Ang, Calvin Ching Ian ^{[1
]}

Law, Wai Cheung ^{[1
,2
]}

Tang, Jiaxuan ^{[3
]}

Zhang, Wen ^{[4
]}

Wong, Ping Kwan Johnny ^{[4
]}

Yu, Xiaojiang ^{[5
]}

Xu, Feng ^{[3
]}

Wee, Andrew T. S. ^{[6
,7
,8
]}

Seet, Chim Seng ^{[2
]}

Lew, Wen Siang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

[2] GLOBALFOUNDRIES Singapore Pte Ltd, Singapore 738406, Singapore

[3] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Metall & Intermetall Mat Technol, Nanjing 210094, Peoples R China

[4] Northwestern Polytech Univ, Sch Microelect, Xian 710072, Peoples R China

[5] Natl Univ Singapore, Singapore Synchrotron Light Source, Singapore 117603, Singapore

[6] Natl Univ Singapore, Dept Phys, Singapore 117546, Singapore

[7] Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 117546, Singapore

[8] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore

来源：

ACS NANO | 2021年 / 15卷 / 05期

关键词：

spin Hall effect; spin-orbit torque; spin-orbit coupling; spin-torque ferromagnetic resonance; exible substrate; mechanical strain; HALL; SURFACE;

D O I：

10.1021/acsnano.0c09404

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Current-induced magnetization switching by spin-orbit torque generated in heavy metals offers an enticing realm for energy-efficient memory and logic devices. The spin Hall efficiency is a key parameter in describing the generation of spin current. Recent findings have reported enhancement of spin Hall efficiency by mechanical strain, but its origin remains elusive. Here, we demonstrate a 45% increase in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of which 78% of the enhancement was preserved even after the strain was removed. Spin transparency and X-ray magnetic circular dichroism revealed that the enhancement was attributed to a bulk effect in the Pt layer. This was further confirmed by the linear relationship between the spin Hall efficiency and resistivity, which indicates an increase in skew-scattering. These findings shed light on the origin of enhancement and are promising in shaping future utilization of mechanical strain for energy-efficient devices.

引用

页码：8319 / 8327

页数：9

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