Chemical composition dependence of photoluminescence from Cu2ZnSnS4 thin films with potential fluctuations

被引:6
作者
Tanaka, Kunihiko [1 ]
Takamatsu, Yoshiharu [1 ]
Miura, Shinya [1 ]
机构
[1] Nagaoka Univ Technol, Kamitomioka 1603-1, Nagaoka, Niigata 9402188, Japan
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6 | 2017年 / 14卷 / 06期
关键词
Cu2ZnSnS4; photoluminescence; potential fluctuations; GAP;
D O I
10.1002/pssc.201600138
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature and excitation intensity dependence of photoluminescence (PL) spectra from Cu2ZnSnS4 (CZTS) thin films with various chemical compositions was investigated. Three types of CZTS thin films were examined: Zn-rich (group A), Cu-and Zn-poor (group B), and Cu-rich and Zn-poor (group C). Groups A, B, and C gave PL spectra with peaks at around 1.2, 1.30, and 1.45 eV, respectively. These spectra exhibited large peak energy shifts to higher energies as the excitation intensity increased by more than 10 meV/decade due to potential fluctuations. The PL spectra of groups A and B can be attributed to band-to-impurity luminescence, and the origin of the spectra was found to be CuSn and VZn or [V-Zn + Sn-Zn], respectively. The potential fluctuations were estimated from the lower energy side of the PL spectra, and the Cu-poor samples exhibited smaller potential fluctuations. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数:5
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共 19 条
  • [1] Raman analysis of monoclinic Cu2SnS3 thin films
    Berg, Dominik M.
    Djemour, Rabie
    Guetay, Levent
    Siebentritt, Susanne
    Dale, Phillip J.
    Fontane, Xavier
    Izquierdo-Roca, Victor
    Perez-Rodriguez, Alejandro
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (19)
  • [2] Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu2ZnSnS4
    Chen, Shiyou
    Yang, Ji-Hui
    Gong, X. G.
    Walsh, Aron
    Wei, Su-Huai
    [J]. PHYSICAL REVIEW B, 2010, 81 (24)
  • [3] Dirnstorfer I, 1998, PHYS STATUS SOLIDI A, V168, P163, DOI 10.1002/(SICI)1521-396X(199807)168:1<163::AID-PSSA163>3.0.CO
  • [4] 2-T
  • [5] Band tailing and efficiency limitation in kesterite solar cells
    Gokmen, Tayfun
    Gunawan, Oki
    Todorov, Teodor K.
    Mitzi, David B.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (10)
  • [6] The role of structural properties on deep defect states in Cu2ZnSnS4 studied by photoluminescence spectroscopy
    Grossberg, M.
    Krustok, J.
    Raudoja, J.
    Raadik, T.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (10)
  • [7] ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS
    ITO, K
    NAKAZAWA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (11): : 2094 - 2097
  • [8] Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique
    Katagiri, Hironori
    Jimbo, Kazuo
    Yamada, Satoru
    Kamimura, Tsuyoshi
    Maw, Win Shwe
    Fukano, Tatsuo
    Ito, Tadashi
    Motohiro, Tomoyoshi
    [J]. APPLIED PHYSICS EXPRESS, 2008, 1 (04) : 0412011 - 0412012
  • [9] Kato Takuya, 2012, 27th European Photovoltaic Solar Energy Conference and Exhibition. Proceedings, P2236
  • [10] The role of spatial potential fluctuations in the shape of the PL bands of multinary semiconductor compounds
    Krustok, J
    Collan, H
    Yakushev, M
    Hjelt, K
    [J]. PHYSICA SCRIPTA, 1999, T79 : 179 - 182