Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

被引：14

作者：

Slawinska, J. ^{[1
]}

Muziol, G. ^{[1
]}

Siekacz, M. ^{[1
]}

Turski, H. ^{[1
]}

Hajdel, M. ^{[1
]}

Zak, M. ^{[1
]}

Feduniewicz-Zmuda, A. ^{[1
]}

Staszczak, G. ^{[1
]}

Skierbiszewski, C. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, Warsaw, Poland

来源：

OPTICS EXPRESS | 2022年 / 30卷 / 15期

关键词：

SURFACE RECOMBINATION; GAN; EFFICIENCY;

D O I：

10.1364/OE.458950

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on III-nitride-based micro-light-emitting diodes (mu LEDs) operating at 450 nm wavelength with diameters down to 2 mu m. Devices with a standard LED structure followed by a tunnel junction were grown by plasma-assisted molecular beam epitaxy. The emission size of mu LEDs was defined by shallow He implantation of the tunnel junction region. The ion implantation process allows to create flat devices, applicable to further epitaxial regrowth. The shift of current density for the maximum external quantum efficiency as a function of mu LEDs diameter was observed. This effect may be a fingerprint of the change in the external efficiency related to the lateral carrier diffusion (limited by holes) in InGaN quantum wells. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

引用

页码：27004 / 27014

页数：11

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