Variations of channel conductance in AlGaN/GaN structure with sub-bandgap laser light and above-bandgap illuminations

被引：6
作者：
Chang, Yun-Chorng [1 ]
Li, Yun-Li
Lin, Tzung-Han
Sheu, Jinn-Kong
机构：
[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan
[4] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 106, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 6A期
关键词：
GaN; high electron mobility transistor; surface states; two-dimensional electron gas;
D O I：
10.1143/JJAP.46.3382
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Variations of the voltage response between source and drain electrodes of an AlGaN/GaN high electron mobility transistor by the green laser light or ultraviolet (UV) illumination are studied. A subsequent green laser illumination causes the voltage between the electrodes to increase with background UV illumination. Interactions between surface states and excess carriers generated by the UV light are proposed to be responsible for the voltage increase. Excess electrons are captured by the positively charged surface states after injection into the surface region with the assistance of the green laser light and result in a reduced two-dimensional electron gas density.
引用
收藏
页码：3382 / 3384
页数：3
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