Radiation and polarization properties of free-exciton emission from AlN (0001) surface

被引：53
作者：
Taniyasu, Yoshitaka [1 ]
Kasu, Makoto [1 ]
Makimoto, Toshiki [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 26期
关键词：
D O I：
10.1063/1.2752727
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Free-exciton emission from AlN (0001) surface was characterized by angle-dependent photoluminescence (PL) measurement. As the radiation direction was inclined from the surface normal (c-axis direction), the emission intensity increased. This is because the optical transition between the conduction band and the top valence band is mainly allowed for light with the electric field parallel to the c-axis direction of AlN (E parallel to c) and consequently the free-exciton emission is strongly polarized for E parallel to c. By analyzing the angle-dependent PL intensities, the polarization ratio was estimated to be 0.995. This high polarization ratio results from the large negative crystal-field splitting energy. (c) 2007 American Institute of Physics.
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