Low-frequency noise in cadmium-selenide thin-film transistors

被引：21

作者：

Deen, MJ ^{[1
]}

Rumyantsev, SL

Landheer, D

Xu, DX

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[2] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1314887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter alpha lies within the usual range 10(-3)<alpha < 2x10(-2) for Si TFTs and amorphous Si. (C) 2000 American Institute of Physics. [S0003-6951(00)03740-2].

引用

页码：2234 / 2236

页数：3

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