Low-frequency noise in cadmium-selenide thin-film transistors

被引：21
|
作者：
Deen, MJ [1 ]
Rumyantsev, SL
Landheer, D
Xu, DX
机构：
[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
[2] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期
关键词：
D O I：
10.1063/1.1314887
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter alpha lies within the usual range 10(-3)<alpha < 2x10(-2) for Si TFTs and amorphous Si. (C) 2000 American Institute of Physics. [S0003-6951(00)03740-2].
引用
收藏
页码：2234 / 2236
页数：3
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