Plasma Assisted Bonding of Copper and Silver Substrates

被引:0
|
作者
Fujino, Masahisa [1 ]
Abe, Kentaro [1 ]
Suga, Tadatomo [1 ]
机构
[1] Univ Tokyo, Dept Precis Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源
2014 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP) | 2014年
关键词
FORMIC-ACID PRETREATMENT; ROOM-TEMPERATURE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this research, copper and silver substrates have been bonded by plasma activated bonding method at 190 degrees C. Furtheremore, addtional formic acid process after plasma process for both surfaces had effect to be bonded more tightly. The surface conditions were analyzed by SEM, AFM and XPS. As results, silver surfaces were etched and smoothed by plasma, and the surface oxidation adsorbent was removed, according to XPS Ols spectra. Moreover, oxidation layer of silver surface was reduced by formic acid process. On the other hand, copper surface was less changed by plasma, but copper surface was also reduced, and copper precipitation was observed on the surface by formic acid process.
引用
收藏
页码:648 / 651
页数:4
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