A 2.8mW/Gb/s 14Gb/s Serial Link Transceiver in 65nm CMOS

被引:0
|
作者
Saxena, Saurabh [1 ]
Shu, Guanghua [1 ]
Nandwana, Romesh Kumar [1 ]
Talegaonkar, Mrunmay [1 ]
Elkholy, Ahmed [1 ]
Anand, Tejasvi [1 ]
Kim, Seong Joong [1 ]
Choi, Woo-Seok [1 ]
Hanumolu, Pavan Kumar [1 ]
机构
[1] Univ Illinois, Urbana, IL 61801 USA
来源
2015 SYMPOSIUM ON VLSI CIRCUITS (VLSI CIRCUITS) | 2015年
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A low power 14Gb/s transceiver using partially segmented voltage-mode driver, charge-based analog front-end, and low power clock and data recovery circuit that also minimizes clock distribution power is presented. Fabricated in a 65nm CMOS process, the transceiver achieves a power efficiency of 2.8mW/Gb/s and BER<10(-12) while operating at 14Gb/s with 12dB channel loss.
引用
收藏
页数:2
相关论文
共 50 条
  • [1] A 2.8 mW/Gb/s, 14 Gb/s Serial Link Transceiver
    Saxena, Saurabh
    Shu, Guanghua
    Nandwana, Romesh Kumar
    Talegaonkar, Mrunmay
    Elkholy, Ahmed
    Anand, Tejasvi
    Choi, Woo-Seok
    Hanumolu, Pavan Kumar
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (05) : 1399 - 1411
  • [2] A 16Gb/s 65nm CMOS Transceiver for a Memory Interface
    Chun, Jung-Hoon
    Lee, Haechang
    Shen, Jie
    Chin, T. J.
    Wu, Ting
    Shi, Xudong
    Kaviani, Kambiz
    Beyene, Wendemagegnehu
    Leibowitz, Brian
    Perego, Rich
    Chang, Ken
    2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, 2008, : 25 - 28
  • [3] A 40 Gb/s Serial Link Transceiver in 28 nm CMOS Technology
    Navid, Reza
    Chen, E-Hung
    Hossain, Masum
    Leibowitz, Brian
    Ren, Jihong
    Chou, Chuen-Huei Adam
    Daly, Barry
    Aleksic, Marko
    Su, Bruce
    Li, Simon
    Shirasgaonkar, Makarand
    Heaton, Fred
    Zerbe, Jared
    Eble, John
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (04) : 814 - 827
  • [4] A 28 Gb/s Multistandard Serial Link Transceiver for Backplane Applications in 28 nm CMOS
    Zhang, Bo
    Khanoyan, Karapet
    Hatamkhani, Hamid
    Tong, Haitao
    Hu, Kangmin
    Fallahi, Siavash
    Abdul-Latif, Mohammed
    Vakilian, Kambiz
    Fujimori, Ichiro
    Brewster, Anthony
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (12) : 3089 - 3100
  • [5] A 3 Gb/s multichannel transceiver in 65 nm CMOS technology
    张锋
    邱玉松
    Journal of Semiconductors, 2015, (01) : 154 - 161
  • [6] A 3 Gb/s multichannel transceiver in 65 nm CMOS technology
    张锋
    邱玉松
    Journal of Semiconductors, 2015, 36 (01) : 154 - 161
  • [7] A 3 Gb/s multichannel transceiver in 65 nm CMOS technology
    Zhang Feng
    Qiu Yusong
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (01)
  • [8] A 14-mW 6.25-Gb/s transceiver in 90-nm CMOS
    Poulton, John
    Palmer, Robert
    Fuller, Andrew M.
    Greer, Trey
    Eyles, John
    Dally, William J.
    Horowitz, Mark
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (12) : 2745 - 2757
  • [9] A 20 Gb/s Limiting Amplifier in 65nm CMOS Technology
    He, Rui
    Xu, Jianfei
    Yan, Na
    Hao, Min
    2013 IEEE 10TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2013,
  • [10] A 60Gb/s 173mW Receiver Frontend in 65nm CMOS Technology
    Han, Jaeduk
    Lu, Yue
    Sutardja, Nicholas
    Jung, Kwangmo
    Alon, Elad
    2015 SYMPOSIUM ON VLSI CIRCUITS (VLSI CIRCUITS), 2015,