Mechanism of high selectivity in ceria based shallow trench isolation chemical mechanical polishing slurries

被引:19
作者
Manivannan, R. [1 ]
Victoria, S. Noyel [1 ]
Ramanathan, S. [1 ]
机构
[1] Indian Inst Technol, Dept Chem Engn, Madras 600036, Tamil Nadu, India
关键词
Chemical mechanical polishing; Shallow trench isolation; Selectivity; Abrasives; Amino acid; Active sites; CMP; PLANARIZATION; ABRASIVES; INTEGRATION; REMOVAL;
D O I
10.1016/j.tsf.2010.05.072
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
DL-aspartic acid as a removal rate selectivity enhancer for shallow trench isolation chemical mechanical polishing slurries was investigated over a pH range. The effects of downward pressure, rotational speed of the turntable as well as the ceria abrasive loading were also examined. The selectivity is very sensitive to changes in the pressure but not to changes in the rotational speed. Select experiments were also conducted with other types of abrasives with and without the additive. A comparison of the pK(a) values of the amino acid with the variation of the selectivity with pH indicates that the form of amino acid plays a vital role in determining the polishing behavior and the selectivity. Further, the results corroborate the hypothesis that chemically active sites on the abrasive may be blocked by certain forms of the amino acids, leading to changes in the selectivity. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:5737 / 5740
页数:4
相关论文
共 18 条
[1]   Slurry additive effects on the suppression of silicon nitride removal during CMP [J].
America, WG ;
Babu, SV .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (12) :G327-G330
[2]   Interfacial reactivity between ceria and silicon dioxide and silicon nitride surfaces - Organic additive effects [J].
Carter, PW ;
Johns, TP .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (08) :G218-G221
[3]   Analysis of Scratches Formed on Oxide Surface during Chemical Mechanical Planarization [J].
Choi, Jae-Gon ;
Prasad, Y. Nagendra ;
Kim, In-Kwon ;
Kim, In-Gon ;
Kim, Woo-Jin ;
Busnaina, Ahmed A. ;
Park, Jin-Goo .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (02) :H186-H191
[4]   CHEMICAL PROCESSES IN GLASS POLISHING [J].
COOK, LM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 120 (1-3) :152-171
[5]  
HOSALI SD, 1998, Patent No. 5738800
[6]   On chemo-mechanical polishing (CMP) of silicon nitride (Si3N4) workmaterial with various abrasives [J].
Jiang, M ;
Wood, NO ;
Komanduri, R .
WEAR, 1998, 220 (01) :59-71
[7]  
Kido T., 2001, US Pat., Patent No. [6,299,659, 6299659]
[8]   INTEGRATION OF CHEMICAL MECHANICAL POLISHING INTO CMOS INTEGRATED-CIRCUIT MANUFACTURING [J].
LANDIS, H ;
BURKE, P ;
COTE, W ;
HILL, W ;
HOFFMAN, C ;
KAANTA, C ;
KOBURGER, C ;
LANGE, W ;
LEACH, M ;
LUCE, S .
THIN SOLID FILMS, 1992, 220 (1-2) :1-7
[9]   Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries [J].
Lee, Sang-Ick ;
Hwang, Jinho ;
Kim, Hyoungjae ;
Jeong, Haedo .
MICROELECTRONIC ENGINEERING, 2007, 84 (04) :626-630
[10]  
Lehninger A., 1993, PRINCIPLES BIOCH