Band gap engineering of N-alloyed Ga2O3 thin films

被引：25

作者：

Song, Dongyu ^{[1
]}

Li, Li ^{[2
]}

Li, Bingsheng ^{[1
]}

Sui, Yu ^{[1
]}

Shen, Aidong ^{[3
]}

机构：

[1] Harbin Inst Technol, Dept Phys, Harbin 150080, Peoples R China

[2] HIT, Sch Life Sci & Technol, Harbin 150080, Peoples R China

[3] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

来源：

AIP ADVANCES | 2016年 / 6卷 / 06期

基金：

中国国家自然科学基金;

关键词：

PHOTOCATALYSTS; SEMICONDUCTORS; BETA-GA2O3; CUGAO2; RANGE; ZNO;

D O I：

10.1063/1.4954720

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p-Ga3d orbits and formation of hexagonal structure. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

引用

页数：6