Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

被引：6

作者：

Morigaki, K.

Takeda, K.

Hikita, H.

Cabarrocas, P. Roca i

机构：

[1] Hiroshima Univ, Dept Elect & Digital Syst Engn, Saeki Ku, Hiroshima 7315193, Japan

[2] Electrochem & Canc Inst, Chofu Ku, Tokyo 1820022, Japan

[3] Meikai Univ, Phys Lab, Chiba 2798550, Japan

[4] Ecole Polytech, CNRS, UMR 7647, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 04期

关键词：

disordered system; amorphous semiconductors; recombination and trapping; light-induced phenomena;

D O I：

10.1016/j.ssc.2007.01.049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters beta and tau involved in the function are estimated as a function of saturated dangling bond density N(SS). The experimental values of beta, tau, and N(SS) are compared with those calculated based on our model of light-induced defect creation in a-Si:H. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：232 / 236

页数：5

共 50 条

[31] Light-induced structural changes in hydrogenated amorphous silicon
Abtew, T. A.
Drabold, D. A.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2006, 8 (06): : 1979 - 1988
[32] EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON
BRANDT, MS
STUTZMANN, M
APPLIED PHYSICS LETTERS, 1991, 58 (15) : 1620 - 1622
[33] INFLUENCE OF MECHANICAL-STRESS ON LIGHT-INDUCED CREATION OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
GHAITH, A
PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (04) : 197 - 200
[34] Light-induced defect creation in hydrogenated polymorphous silicon during repeated cycles of illumination and annealing
Morigaki, K
Takeda, K
Hikita, H
Roca, P
Cabarrocas, I
PHILOSOPHICAL MAGAZINE, 2005, 85 (29) : 3393 - 3407
[35] KINETICS OF LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - THE CONSTANT DEGRADATION METHOD
BRANDT, MS
STUTZMANN, M
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 211 - 214
[36] LIGHT-INDUCED CHANGE IN DEFECT-BAND PHOTOLUMINESCENCE OF DOPED HYDROGENATED AMORPHOUS-SILICON
QIU, CH
PANKOVE, JI
PHYSICAL REVIEW B, 1990, 41 (18) : 12744 - 12749
[37] DEPENDENCE OF THE SATURATED LIGHT-INDUCED DEFECT DENSITY ON MACROSCOPIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON
PARK, HR
LIU, JZ
CABARROCAS, PRI
MARUYAMA, A
ISOMURA, M
WAGNER, S
ABELSON, JR
FINGER, F
APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1440 - 1442
[38] Mediation of light-induced metastable defect formation in hydrogenated amorphous silicon by interstitial hydrogen and voids
Longeaud, C
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2002, 4 (03): : 461 - 479
[39] LIGHT-INDUCED DEFECT GENERATION IN HYDROGENATED AMORPHOUS-SILICON UNDER THE CONSTANT PHOTOCURRENT CONDITIONS
JANG, YH
LEE, C
YOON, BG
PARK, HR
SOLID STATE COMMUNICATIONS, 1992, 82 (04) : 283 - 286
[40] ROLE OF ANNEALABLE DEFECTS IN THE SATURATED LIGHT-INDUCED DEFECT DENSITY OF HYDROGENATED AMORPHOUS-SILICON
YOON, JH
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1993, 26 (06) : 710 - 713

← 1 2 3 4 5 →