Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

被引：6

作者：

Morigaki, K.

Takeda, K.

Hikita, H.

Cabarrocas, P. Roca i

机构：

[1] Hiroshima Univ, Dept Elect & Digital Syst Engn, Saeki Ku, Hiroshima 7315193, Japan

[2] Electrochem & Canc Inst, Chofu Ku, Tokyo 1820022, Japan

[3] Meikai Univ, Phys Lab, Chiba 2798550, Japan

[4] Ecole Polytech, CNRS, UMR 7647, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 04期

关键词：

disordered system; amorphous semiconductors; recombination and trapping; light-induced phenomena;

D O I：

10.1016/j.ssc.2007.01.049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters beta and tau involved in the function are estimated as a function of saturated dangling bond density N(SS). The experimental values of beta, tau, and N(SS) are compared with those calculated based on our model of light-induced defect creation in a-Si:H. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：232 / 236

页数：5

共 22 条

[1] KINETICS OF ANNEALING OF DANGLING BONDS IN SPUTTERED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON [J].

FUJITA, Y ;

YAMAGUCHI, M ;

MORIGAKI, K .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (01) :57-67

[2] Light-induced defect creation in a-Si:H:: Metastable defects or metastable H atoms? [J].

Godet, C .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :272-275

[3] Metastable hydrogen atom trapping in hydrogenated amorphous silicon films: A microscopic model for metastable defect creation [J].

Godet, C .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1998, 77 (03) :765-777

[4] DISPERSIVE HYDROGEN MOTION AND CREATION OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB .

AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 :571-576

[5] EVIDENCE FOR HYDROGEN MOTION IN ANNEALING OF LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

KAKALIOS, J .

PHYSICAL REVIEW B, 1988, 37 (02) :1020-1023

[6] Light-induced defect creation in hydrogenated polymorphous silicon during repeated cycles of illumination and annealing [J].

Morigaki, K ;

Takeda, K ;

Hikita, H ;

Roca, P ;

Cabarrocas, I .

PHILOSOPHICAL MAGAZINE, 2005, 85 (29) :3393-3407

[7] Light-induced defect creation in hydrogenated polymorphous silicon [J].

Morigaki, K ;

Takeda, K ;

Hikita, H ;

Cabarrocas, PRI .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 121 (1-2) :34-41

[8] Light-induced defect creation under pulsed subbandgap illumination in hydrogenated amorphous silicon [J].

Morigaki, K ;

Hikita, H ;

Takemura, H ;

Yoshimura, T ;

Ogihara, C .

PHILOSOPHICAL MAGAZINE LETTERS, 2003, 83 (05) :341-349

[9] Light-induced creation and annihilation of two types of dangling bonds in a-Si:H:: their relative densities during illumination [J].

Morigaki, K ;

Hikita, H .

SOLID STATE COMMUNICATIONS, 2000, 114 (02) :69-74

[10] Light-induced defect creation under intense optical excitation in hydrogenated amorphous silicon [J].

Morigaki, K ;

Hikita, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :455-459

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