Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

被引：6
|
作者：
Morigaki, K.
Takeda, K.
Hikita, H.
Cabarrocas, P. Roca i
机构：
[1] Hiroshima Univ, Dept Elect & Digital Syst Engn, Saeki Ku, Hiroshima 7315193, Japan
[2] Electrochem & Canc Inst, Chofu Ku, Tokyo 1820022, Japan
[3] Meikai Univ, Phys Lab, Chiba 2798550, Japan
[4] Ecole Polytech, CNRS, UMR 7647, Lab Phys Interfaces & Couches Minces, F-91128 Palaiseau, France
来源：
SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 04期
关键词：
disordered system; amorphous semiconductors; recombination and trapping; light-induced phenomena;
D O I：
10.1016/j.ssc.2007.01.049
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters beta and tau involved in the function are estimated as a function of saturated dangling bond density N(SS). The experimental values of beta, tau, and N(SS) are compared with those calculated based on our model of light-induced defect creation in a-Si:H. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：232 / 236
页数：5
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