Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

被引：0

作者：

Ngo, Thi Huong ^{[1
]}

Comyn, Remi ^{[1
]}

Chenot, Sebastien ^{[1
]}

Brault, Julien ^{[1
]}

Nemoz, Maud ^{[1
]}

Vennegues, Philippe ^{[1
]}

Damilano, Benjamin ^{[1
]}

Vezian, Stephane ^{[1
]}

Frayssinet, Eric ^{[1
]}

Cozette, Flavien ^{[2
]}

Defrance, Nicolas ^{[3
]}

Lecourt, Francois ^{[4
]}

Labat, Nathalie ^{[5
]}

Maher, Hassan ^{[2
]}

Cordier, Yvon ^{[1
]}

机构：

[1] Univ Cote Azur, CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France

[2] Univ Sherbrooke, Lab Nanotechnol Nanosyst, CNRS, UMI 3463,3IT, 3000 Bd Univ, Sherbrooke J1K OA5, PQ, Canada

[3] Univ Lille, CNRS, UMR8520, IEMN, Ave Poincare, F-59650 Villeneuve Dascq, France

[4] OMMIC, 2 Rue Moulin, F-94450 Limeil Brevannes, France

[5] Univ Bordeaux, Lab Integrat Mat Syst, Talence, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2022年 / 593卷

关键词：

Selective sublimation; Local area epitaxy; Group III -nitrides; High electron mobility transistors; MOLECULAR-BEAM EPITAXY; HEMTS; OPERATION; GROWTH; HFET;

D O I：

10.1016/j.jcrysgro.2022.126779

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode transistors. Thanks to this approach, enhancement-mode transistors are fabricated with a threshold voltage between 0 V and +1.5 V depending on the barrier layer aluminum molar fraction and thickness. Furthermore, we show the benefit of the combination of selective sublimation with the regrowth of AlGaN to reduce access resistance in these transistors which can be co-integrated with depletion-mode devices fabricated in the same process in areas where p-GaN has been totally evaporated.

引用

页数：7

共 21 条

[1] Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate [J].

Altuntas, Philippe ;

Lecourt, Francois ;

Cutivet, Adrien ;

Defrance, Nicolas ;

Okada, Etienne ;

Lesecq, Marie ;

Rennesson, Stephanie ;

Agboton, Alain ;

Cordier, Yvon ;

Hoel, Virginie ;

De Jaeger, Jean-Claude .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) :303-305

[2] The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) [J].

Baron, N. ;

Cordier, Y. ;

Chenot, S. ;

Vennegues, P. ;

Tottereau, O. ;

Leroux, M. ;

Semond, F. ;

Massies, J. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)

[3] Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy [J].

Brochen, Stephane ;

Brault, Julien ;

Chenot, Sebastien ;

Dussaigne, Amelie ;

Leroux, Mathieu ;

Damilano, Benjamin .

APPLIED PHYSICS LETTERS, 2013, 103 (03)

[4] Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth [J].

Brown, D. F. ;

Shinohara, K. ;

Williams, A. ;

Milosavljevic, I. ;

Grabar, R. ;

Hashimoto, P. ;

Willadsen, P. J. ;

Schmitz, A. ;

Corrion, A. L. ;

Kim, S. ;

Regan, D. ;

Butler, C. M. ;

Burnham, S. D. ;

Micovic, M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) :1063-1067

[5] AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination [J].

Cordier, Y. ;

Azize, M. ;

Baron, N. ;

Chenot, S. ;

Tottereau, O. ;

Massies, J. .

JOURNAL OF CRYSTAL GROWTH, 2007, 309 (01) :1-7

[6] Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication [J].

Damilano, B. ;

Vezian, S. ;

Brault, J. ;

Alloing, B. ;

Massies, J. .

NANO LETTERS, 2016, 16 (03) :1863-1868

[7] 18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation [J].

Feng, Z. H. ;

Zhou, R. ;

Xie, S. Y. ;

Yin, J. Y. ;

Fang, J. X. ;

Liu, B. ;

Zhou, W. ;

Chen, Kevin J. ;

Cai, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1386-1388

[8] Review of technology for normally-off HEMTs with p-GaN gate [J].

Greco, Giuseppe ;

Iucolano, Ferdinando ;

Roccaforte, Fabrizio .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 78 :96-106

[9] Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance [J].

Hahn, Herwig ;

Luekens, Gerrit ;

Ketteniss, Nico ;

Kalisch, Holger ;

Vescan, Andrei .

APPLIED PHYSICS EXPRESS, 2011, 4 (11)

[10] Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors [J].

Jiang, Huaxing ;

Zhu, Renqiang ;

Lyu, Qifeng ;

Tang, Chak Wah ;

Lau, Kei May .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (03)

← 1 2 3 →