Displacements of Sb atoms in supersaturated Sb-doped Si layer formed by molecular beam epitaxy growth

Rutherford backscattering channeling measurements with angular scans have been carried out on < 100 > Sb-doped Si superlattice structures formed by molecular beam epitaxy growth. Three different crystallographic axes < 100 >, < 111 >, and < 110 > have been explored. We have observed Sb displacements from their substitutional sites with displacement amplitudes of 0.22 angstrom in as- grown samples. The displacements increase with increasing post-growth annealing temperatures, associated with formation of nanometer size Sb precipitates. (c) 2007 American Institute of Physics.