Fabrication of very high resistivity Si with low loss and cross talk

被引：26

作者：

Wu, YH ^{[1
]}

Chin, A

Shih, KH

Wu, CC

Liao, CP

Pai, SC

Chi, CC

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Elect Res Serv Org, Ind Technol Res Inst, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 09期

关键词：

cross talk; high resistivity Si; RF loss;

D O I：

10.1109/55.863105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Omega-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 M Omega-cm is measured that is close to intrinsic Si and semi-insulating GaAs, Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 mu m gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast similar to 1 ps carrier lifetime stable even after a 400 degrees C annealing for 1 h, Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 Angstrom oxides.

引用

页码：442 / 444

页数：3

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