The Al-doping and post-annealing treatment effects on the structural and optical properties of ZnO:Al thin films deposited on Si substrate

被引：54
作者：
Ding, J. J. [1 ]
Chen, H. X. [1 ]
Ma, S. Y. [1 ]
机构：
[1] NW Normal Univ, Coll Phys & Elect Engn, Lanzhou 730070, Gansu, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 13期
基金：
中国国家自然科学基金;
关键词：
ZnO thin films; RF magnetron sputtering; X-ray diffraction; Optical properties; PHOTOLUMINESCENCE; TRANSITION; DEPENDENCE; DEFECTS;
D O I：
10.1016/j.apsusc.2010.02.021
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Al-doped ZnO (ZnO:Al) thin films with different Al contents were deposited on Si substrates using the radio frequency reactive magnetron sputtering technique. X-ray diffraction (XRD) measurements showed that the crystallinity of the films was promoted by appropriate Al content (0.75 wt.%). Then the ZnO:Al film with Al content of 0.75 wt.% was annealed in vacuum at different temperatures. XRD patterns revealed that the residual compressive stress decreased at higher annealing temperatures. While the surface roughness of the ZnO: Al film annealed at 300 degrees C became smoother, those of the ZnO:Al films annealed at 600 and 750 degrees C became rougher. The photoluminescence (PL) measurements at room temperature revealed a violet, two blue and a green emission. The origin of these emissions was discussed and the mechanism of violet and blue emission of ZnO:Al thin films were suggested. We concluded that the defect centers are mainly ascribed to antisite oxygen and interstitial Zn in annealed (in vacuum) ZnO: Al films. Crown Copyright (C) 2010 Published by Elsevier B. V. All rights reserved.
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页码：4304 / 4309
页数：6
相关论文
共 25 条
[1]  
Bang KH, 2003, APPL SURF SCI, V207, P359, DOI 10.1016/S0169-4332(02)00005-9
[2]  
Egehaaf H. J., 1996, J CRYST GROWTH, V161, P190
[3]   Annealing effect on the luminescent properties and native defects of ZnO [J].
Gruzintsev, AN ;
Yakimov, EE .
INORGANIC MATERIALS, 2005, 41 (07) :725-729
[4]   Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (100) substrates [J].
Han, J. H. ;
No, Y. S. ;
Kim, T. W. ;
Lee, J. Y. ;
Kim, J. Y. ;
Choi, W. K. .
APPLIED SURFACE SCIENCE, 2010, 256 (06) :1920-1924
[5]   Optical constants of transparent ZnO films by RF magnetron sputtering [J].
Huang, Bo ;
Li, Jing ;
Wu, Yue-bo ;
Guo, Dong-hui ;
Wu, Sun-tao .
MATERIALS LETTERS, 2008, 62 (8-9) :1316-1318
[6]   Annealing effect on the property of ultraviolet and green emissions of ZnO thin films [J].
Kang, HS ;
Kang, JS ;
Kim, JW ;
Lee, SY .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) :1246-1250
[7]   Fabrication and properties of ZnO:Cu and ZnO:Ag thin films [J].
Khomchenko, V. S. ;
Kryshtab, T. G. ;
Savin, A. K. ;
Zavyalova, L. V. ;
Roshchina, N. N. ;
Rodionov, V. E. ;
Lytvyn, O. S. ;
Kushnirenko, V. ;
Khachatryan, V. B. ;
Andraca-Adame, J. A. .
SUPERLATTICES AND MICROSTRUCTURES, 2007, 42 (1-6) :94-98
[8]   Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering [J].
Kim, KK ;
Tampo, H ;
Song, JO ;
Seong, TY ;
Park, SJ ;
Lee, JM ;
Kim, SW ;
Fujita, S ;
Niki, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7A) :4776-4779
[9]   Properties of Al heavy-doped ZnO thin films by RF magnetron sputtering [J].
Li, L. J. ;
Deng, H. ;
Dai, L. P. ;
Chen, J. J. ;
Yuan, Q. L. ;
Li, Y. .
MATERIALS RESEARCH BULLETIN, 2008, 43 (06) :1456-1462
[10]   Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J].
Lin, BX ;
Fu, ZX ;
Jia, YB .
APPLIED PHYSICS LETTERS, 2001, 79 (07) :943-945
123