Investigation of the internal electric field distribution under in situ x-ray irradiation and under low temperature conditions by the means of the Pockels effect

被引:20
作者
Prekas, G. [1 ]
Sellin, P. J. [1 ]
Veeramani, P. [1 ]
Davies, A. W. [1 ]
Lohstroh, A. [1 ]
Ozsan, M. E. [1 ]
Veale, M. C. [1 ]
机构
[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
基金
英国工程与自然科学研究理事会;
关键词
TRANSPORT-PROPERTIES; DETECTORS; CHARGE;
D O I
10.1088/0022-3727/43/8/085102
中图分类号
O59 [应用物理学];
学科分类号
摘要
The internal electric field distribution in cadmium zinc telluride (CdZnTe) x-ray and gamma-ray detectors strongly affects their performance in terms of charge transport and charge collection properties. In CdZnTe detectors the electric field distribution is sensitively dependent on not only the nature of the metal contacts but also on the working conditions of the devices such as the temperature and the rate of external irradiation. Here we present direct measurements of the electric field profiles in CdZnTe detectors obtained using the Pockels electo-optic effect whilst under in situ x-ray irradiation. These data are also compared with alpha particle induced current pulses obtained by the transient current technique, and we discuss the influence of both low temperature and x-ray irradiation on the electric field evolution. Results from these studies reveal strong distortion of the electric field consistent with the build-up of space charge at temperatures below 250 K, even in the absence of external irradiation. Also, in the presence of x-ray irradiation levels a significant distortion in the electric field is observed even at room temperature which matches well the predicted theoretical model.
引用
收藏
页数:6
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