Thermoelectric properties of high-pressure silicon phases

被引：12

作者：

Ovsyannikov, SV ^{[1
]}

Shchennikov, VV

Misiuk, A

机构：

[1] Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg, Russia

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

JETP LETTERS | 2004年 / 80卷 / 06期

关键词：

D O I：

10.1134/1.1830657

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermo emf in Czochralski-grown silicon single crystals (Cz-Si) was experimentally studied in a range of pressures up to 20 GPa. The pressure dependences revealed phase transitions in the metallic phase of silicon, which passed from tetragonal to orthorhombic and then to hexagonal lattice. The high-pressure silicon phases, as well as the metallic high-pressure phases in A(N) B8 - N semiconductors, possess conductivity of the hole type. As the pressure decreases, the emf behavior reveals transitions to the metastable phases Si-XII and Si-III. Preliminary thermobaric treatment of the samples at a pressure of up to 1.5 GPa and a temperature of T = 450-650degreesC influences the thermoelectric properties of Cz-Si at high pressures. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：405 / 409

页数：5

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