The effects of substrate resistivity on RF component and circuit performance

被引：10

作者：

Floyd, BA ^{[1
]}

Hung, CM ^{[1
]}

O, KK ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, SiMICS, Gainesville, FL 32611 USA

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The benefits of using high-resistivity substrates for RF CMOS applications are experimentally quantified. The quality factors of spiral inductors with a patterned ground shield, varactors, and transistors have been measured on both p(+) (with epi) and p(-) substrates, and in each case, Q is higher on p(-) substrates. A 5.35-GHz VCO on a p-substrate has an 8 dB lower phase noise than that on a p(+) substrate, while a 7-GHz LNA on a p(-) substrate has a 6 dB higher gain and similar to 2.5 dB lower noise figure than that on a p(+) substrate.

引用

页码：164 / 166

页数：3

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