Low-energy Se ion implantation in MoS2 monolayers

被引：28

作者：

Bui, Minh N. ^{[1
,2
]}

Rost, Stefan ^{[2
,3
,4
,5
]}

Auge, Manuel ^{[6
]}

Tu, Jhih-Sian ^{[1
,2
,14
]}

Zhou, Lanqing ^{[1
,2
]}

Aguilera, Irene ^{[3
,4
,5
,15
]}

Bluegel, Stefan ^{[2
,3
,4
,5
]}

Ghorbani-Asl, Mahdi ^{[7
]}

Krasheninnikov, Arkady, V ^{[7
,8
]}

Hashemi, Arsalan ^{[8
]}

Komsa, Hannu-Pekka ^{[8
,9
]}

Jin, Lei ^{[10
]}

Kibkalo, Lidia ^{[10
]}

O'Connell, Eoghan N. ^{[11
,16
,17
]}

Ramasse, Quentin M. ^{[12
,13
]}

Bangert, Ursel ^{[11
]}

Hofsaess, Hans C. ^{[6
]}

Gruetzmacher, Detlev ^{[1
,2
]}

Kardynal, Beata E. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany

[2] Rhein Westfal TH Aachen, Dept Phys, D-52074 Aachen, Germany

[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 1, D-52425 Julich, Germany

[4] Forschungszentrum Julich, Inst Adv Simulat IAS 1, D-52425 Julich, Germany

[5] JARA, D-52425 Julich, Germany

[6] Georg August Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany

[7] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

[8] Aalto Univ, Sch Sci, Dept Appl Phys, POB 11100, FI-00076 Aalto, Finland

[9] Univ Oulu, Microelect Res Unit, POB 8000, FI-90014 Oulu, Finland

[10] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons ER C, D-52425 Julich, Germany

[11] Univ Limerick, Bernal Inst, Dept Phys, Limerick V94 T9PX, Ireland

[12] SuperSTEM Lab, SciTech Daresbury Campus, Daresbury WA4 4AD, England

[13] Univ Leeds, Sch Chem & Proc Engn, Leeds LS2 9JT, W Yorkshire, England

[14] Forschungszentrum Julich, Helmholtz Nano Facil, D-52425 Julich, Germany

[15] Univ Amsterdam, Inst Phys, NL-1090 GL Amsterdam, Netherlands

[16] Max Planck Inst Sci Light, D-91058 Erlangen, Germany

[17] Max Planck Zentrum Phys & Med, D-91058 Erlangen, Germany

来源：

NPJ 2D MATERIALS AND APPLICATIONS | 2022年 / 6卷 / 01期

关键词：

EPITAXIAL-GROWTH; ELECTRON;

D O I：

10.1038/s41699-022-00318-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use Se-80(+) ions at the energy of 20 eV and with fluences up to 5.0.10(14) cm(-2). Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS2-2xSe2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS2 monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 degrees C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.

引用

页数：8

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