Cross relaxation mechanism among Tm3+ ions in Ge30Ga2As6S62 glass

被引:24
作者
Han, YS
Heo, J
Shin, YB
机构
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Photon Glasses Lab, Nam Gu, Pohang 790784, Kyungbuk, South Korea
[2] Elect & Telecommun Res Inst, Telecommun Basic Res Lab, Yuseong Gu, Taejon 305350, South Korea
关键词
D O I
10.1016/S0022-3093(02)01639-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cross relaxation among Tm3+ ions in Ge30Ga2As6S62 glass, where an ion excited to the H-3(4) level transfers part of its energy to a nearby ion in the ground state H-3(6) (H-3(4), H-3(6) --> F-3(4), F-3(4),) was investigated in the temperature range of 20-300 K. The relative intensity ratio of the 1.48 mum emission to 1.84 mum increased with decreasing temperature. At the same time, the lifetime of the H-3(4) level increased. Analysis of decay curves of the 1.48 mum emission suggested that cross relaxation was assisted by phonons of 390 cm(-1) in frequency. These phonons are generated from the asymmetrical stretching vibration of GeS4 tetrahedra. Critical distance for cross relaxation decreased from 0.73 to 0.58 nm as the temperature decreased. (C) 2003 Elsevier Science B.V. All rights reserved.
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页码:302 / 308
页数:7
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