Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films

被引：15
作者：
Licitra, C. [1 ]
Bouyssou, R. [1 ]
Chevolleau, T. [1 ]
Bertin, F.
机构：
[1] CEA, LETI, MINATEC, CNRS,LTM, F-38054 Grenoble, France
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 18期
关键词：
Ellipsometric porosimetry; Ultra low-k dielectrics; Interconnects; Porous SiOCH; PORE-SIZE DISTRIBUTION; LAYERS;
D O I：
10.1016/j.tsf.2010.03.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Porous ultra low-k (ULK) dielectrics are used to reduce resistance-capacitance delay for advanced complementary metal oxide semiconductor interconnects. Since the porosity leads to an increased sensitivity of the material to plasma processes (etching and post-etching plasmas), dedicated characterization techniques are needed to assess the ULK properties during its integration. This study shows that ellipsometric porosimetry, employed with an appropriate multi-solvent protocol, can be effectively used to characterize different plasma-treated porous SiOCH (p-SiOCH) films in terms of porosity, pore sealing and hydrophobicity. It was found that after exposure to fluorocarbon, NH3, H-2, CH4 or O-2 based plasmas the p-SiOCH surface is modified leading to moisture uptake. According to the plasma, the solvent adsorption is also modified due to a densification of the surface. In that case solvent adsorption measurements were performed in a kinetic mode to quantify the plasma-sealing effect. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：5140 / 5145
页数：6
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