Perpendicular Magnetic Anisotropy and Easy Cone State in Ta/Co60Fe20B20/MgO

被引：63

作者：

Shaw, Justin M. ^{[1
]}

Nembach, Hans T. ^{[1
]}

Weiler, Mathias ^{[1
,3
]}

Silva, T. J. ^{[1
]}

Schoen, Martin ^{[1
]}

Sun, Jonathan Z. ^{[2
]}

Worledge, Daniel C. ^{[2
]}

机构：

[1] NIST, Boulder, CO 80305 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] Walther Meissner Inst Tieftemp Forsch, D-85748 Garching, Germany

来源：

IEEE MAGNETICS LETTERS | 2015年 / 6卷

关键词：

Magnetodynamics; ferromagnetic resonance; magnetic anisotropy; magnetic switching; spin-transfer torque; magnetic random-access memory; TRANSITION; MOMENT;

D O I：

10.1109/LMAG.2015.2438773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We used broadband ferromagnetic resonance (FMR) spectroscopy to measure the second- and fourth-order perpendicular magnetic anisotropies in Ta/(t) Co60Fe20B20/MgO layers over a Co60Fe20B20 thickness range of 5.0 nm >= t >= 0.8 nm. For t > 1.0 nm, the easy axis is in the plane of the film, but when t < 1.0 nm, the easy axis is directed perpendicular to the surface. However, the presence of a substantial higher order perpendicular anisotropy results in an easy cone state when t = 1.0 nm. Angular-dependent FMR measurements verify the presence of the easy cone state. Measurement of the spectroscopic g-factor via FMR for both the in-plane and out-of-plane geometries suggests a significant change in electronic and/or physical structure at t approximate to 1.0 nm thickness.

引用

页数：4

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