Ionic Conductive Cellulose Mats by Solution Blow Spinning as Substrate and a Dielectric Interstrate Layer for Flexible Electronics

被引:20
作者
Claro, Pedro I. C. [1 ,2 ,3 ]
Cunha, Ines [2 ,3 ]
Paschoalin, Rafaella T. [4 ]
Gaspar, Diana [2 ,3 ]
Miranda, Kelvi [5 ]
Oliveira Jr, Osvaldo N. [4 ]
Martins, Rodrigo [2 ,3 ]
Pereira, Luis [2 ,3 ]
Marconcini, Jose M. [6 ]
Fortunato, Elvira [2 ,3 ]
Mattoso, Luiz H. C. [6 ]
机构
[1] Univ Fed Sao Carlos, Grad Program Mat Sci & Engn PPG CEM, BR-13565905 Sao Carlos, SP, Brazil
[2] Univ NOVA Lisboa, Fac Sci & Technol, Dept Mat Sci, I3N CENIMAT, P-2829516 Caparica, Portugal
[3] CEMOP UNINOVA, P-2829516 Caparica, Portugal
[4] Univ Sao Paulo, Sao Carlos Inst Phys, BR-13560970 Sao Carlos, SP, Brazil
[5] Univ Fed Lavras, Grad Program Biomat Engn PPGBiomat, BR-37200000 Lavras, MG, Brazil
[6] Embrapa Instrumentat, Natl Nanotechnol Lab Agribusiness LNNA, BR-13560970 Sao Carlos, SP, Brazil
基金
欧洲研究理事会; 巴西圣保罗研究基金会;
关键词
spun fibers; solid-state electrolyte; low-voltage devices; electrolyte-gated circuitry; flexible electronics; ACETATE NANOFIBERS; OXIDE; POLYMER; PERFORMANCE; CHITOSAN; NANOCRYSTALS; TRANSISTORS; MEMBRANES; CHLORIDE; SOLVENT;
D O I
10.1021/acsami.1c06274
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Renewable cellulose substrates with submicron- and nanoscale structures have revived interest in paper electronics. However, the processes behind their production are still complex and time- and energy-consuming. Besides, the weak electrolytic properties of cellulose with submicron- and nanoscale structures have hindered its application in transistors and integrated circuits with low-voltage operation. Here, we report a simple, low-cost approach to produce flexible ionic conductive cellulose mats using solution blow spinning, which are used both as dielectric interstrate and substrate in low-voltage devices. The electrochemical properties of the cellulose mats are tuned through infiltration with alkali hydroxides (LiOH, NaOH, or KOH), enabling their application as dielectric and substrate in flexible, low-voltage, oxide-based field-effect transistors and pencil-drawn resistor-loaded inverters. The transistors exhibit good transistor performances under operation voltage below 2.5 V, and their electrical performance is strictly related to the type of alkali ionic specie incorporated. Devices fabricated on K'-infiltrated cellulose mats present the best characteristics, indicating pure capacitive charging of the semiconductor. The pencil-drawn load resistor inverter presents good dynamic performance. These findings may pave the way for a new generation of low-power, wearable electronics, enabling concepts such as the "Internet of Things".
引用
收藏
页码:26237 / 26246
页数:10
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