Simulation of nanowire tunneling transistors: From the Wentzel-Kramers-Brillouin approximation to full-band phonon-assisted tunneling

被引：121

作者：

Luisier, Mathieu ^{[1
]}

Klimeck, Gerhard

机构：

[1] Purdue Univ, Network Computat Nanotechnol, W Lafayette, IN 47907 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 08期

关键词：

FIELD-EFFECT TRANSISTORS; SILICON; MOBILITY; ALLOYS; SINGLE; GE; SI;

D O I：

10.1063/1.3386521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanowire band-to-band tunneling field-effect transistors (TFETs) are simulated using the Wentzel-Kramers-Brillouin (WKB) approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling (PAT). It is found that the WKB approximation properly works if one single imaginary path connecting the valence band (VB) and the conduction band (CB) dominates the tunneling process as in direct band gap semiconductors. However, PAT is essential in Si and Ge nanowire TFETs where multiple, tightly-coupled, imaginary paths exist between the VB and the CB. (C) 2010 American Institute of Physics. [doi:10.1063/1.3386521]

引用

页数：6

共 27 条

[1] Performance analysis of InP nanowire band-to-band tunneling field-effect transistors [J].

Abul Khayer, M. ;

Lake, Roger K. .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[2] Band-to-band tunneling in carbon nanotube field-effect transistors [J].

Appenzeller, J ;

Lin, YM ;

Knoch, J ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 93 (19) :196805-1

[3] Toward Nanowire Electronics [J].

Appenzeller, Joerg ;

Knoch, Joachim ;

Bjoerk, Mikael I. ;

Riel, Heike ;

Schmid, Heinz ;

Riess, Walter .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :2827-2845

[4]

Bowonder A., 2008, INT WORKSH JUNCT TEC, P93

[5] Valence band effective-mass expressions in the sp3d5s* empirical tight-binding model applied to a Si and Ge parametrization -: art. no. 115201 [J].

Boykin, TB ;

Klimeck, G ;

Oyafuso, F .

PHYSICAL REVIEW B, 2004, 69 (11)

[6] Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory [J].

Boykin, TB ;

Klimeck, G ;

Bowen, RC ;

Oyafuso, F .

PHYSICAL REVIEW B, 2002, 66 (12) :1252071-1252076

[7] Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec [J].

Choi, Woo Young ;

Park, Byung-Gook ;

Lee, Jong Duk ;

Liu, Tsu-Jae King .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) :743-745

[8] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

[9] Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder [J].

Kharche, Neerav ;

Prada, Marta ;

Boykin, Timothy B. ;

Klimek, Gerhard .

APPLIED PHYSICS LETTERS, 2007, 90 (09)

[10] Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs [J].

Khayer, M. Abul ;

Lake, Roger K. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) :1257-1259

← 1 2 3 →