Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Volcano-Shaped Patterned Sapphire Substrates

被引：53

作者：

Kim, Jae Bum ^{[1
,3
]}

Kim, Sang-Mook ^{[1
]}

Kim, Young Woo ^{[1
]}

Kang, Sung-Ku ^{[1
]}

Jeon, Seong-Ran ^{[1
]}

Hwang, Nam ^{[1
]}

Choi, Yeon-Jo ^{[2
]}

Chung, Chang Sub ^{[3
]}

机构：

[1] Korea Photon Technol Inst KOPTI, Kwangju 500460, South Korea

[2] PlusTek Co Ltd, Kwangju 500460, South Korea

[3] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

EFFICIENCY; ULTRAVIOLET; SIMULATION; CONTACTS;

D O I：

10.1143/JJAP.49.042102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new volcano-shaped patterned sapphire substrate (VPSS), which enhances the light extraction efficiency (LEE) of GaN-based light emitting diodes (LEDs), was presented. The Monte Carlo ray-tracing method shows that the VPSS with a crater slope angle of about 50 degrees has the highest LEE. To compare the optical characteristics, 380 nm ultraviolet LEDs were grown on an optimized VPSS, hemispherical PSS (HPSS), and planar sapphire substrate by metal-organic chemical vapor deposition (MOCVD). As a result, the extraction efficiency of the LED grown on the optimized VPSS was estimated to be almost 2.8 times larger than that of the planar sapphire substrate and was enhanced 1.6 times compared with that of the LED grown on the HPSS. (C) 2010 The Japan Society of Applied Physics

引用

页码：0421021 / 0421024

页数：4

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