Evolving shock-wave profiles measured in a silicon crystal by picosecond time-resolved x-ray diffraction

被引：39
作者：
Hironaka, Y
Yazaki, A
Saito, F
Nakamura, KG
Kondo, K
Takenaka, H
Yoshida, M
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Kanagawa 2268503, Japan
[2] NTT Adv Technol Corp, Musashino, Tokyo 1808585, Japan
[3] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期
关键词：
D O I：
10.1063/1.1313297
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Picosecond time-resolved x-ray diffraction is used to probe single-crystal silicon under pulsed-laser irradiation (300 ps pulse at 1.4 J/cm(2)) at an interval of 60 ps. The observed rocking curves show shock compression of the silicon lattice by the laser irradiation. Uniaxial strain profiles perpendicular to the Si(111) plane are estimated using dynamical x-ray diffraction theory. The temporal and spatial evolution of the profiles indicates a propagating shock wave with the velocity of 9.4 km/s inside the silicon crystal. The observed maximum compression is 1.05%, which corresponds to a pressure of 2.18 GPa. (C) 2000 American Institute of Physics. [S0003-6951(00)04939-1].
引用
收藏
页码：1967 / 1969
页数：3
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