MOVPE of CuGaSe2 for photovoltaic applications

被引：2

作者：

Kampschulte, T ^{[1
]}

Bauknecht, A ^{[1
]}

Blieske, U ^{[1
]}

Saad, M ^{[1
]}

Chichibu, S ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Dep FH, D-14109 Berlin, Germany

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654110

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

For the development of a CuGaSe2-based solar cell CuGaSe2 epitaxial layers were grown on GaAs(001) substrates by low-pressure metalorganic vapour phase epitaxy (MOVPE) exclusively with metalorganic precursors. X-ray diffraction (XRD) measurements revealed predominantly c[001]-oriented growth. The mean surface roughness was determined to be less than 6nm by atomic force microscopy (AFM). Low-temperature photoluminescence (PL) at 10K was dominated by a defect-correlated emission at 1.627eV. Moreover, it was possible to observe near band-edge emission. All CuGaSe2 layers showed p-type conductivity with net carrier concentrations in the order of 10(17)cm(-3) Hall-mobilities of approximately 30cm(2)/Vs.

引用

页码：391 / 394

页数：4