Eliminating the excess CuxSe phase in Cu-rich Cu(In,Ga)Se2 by In2Se3 treatment

被引:9
作者
Peng, Xiao [1 ]
Zhao, Ming [1 ]
Zhuang, Daming [1 ]
Guo, Li [1 ]
Ouyang, Liangqi [1 ]
Sun, Rujun [1 ]
Zhang, Leng [1 ]
Wei, Yaowei [1 ]
Zhan, Shilu [1 ]
Lv, Xunyan [1 ]
Wu, Yixuan [1 ]
Ren, Guoan [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
Solar cell; CuxSe distribution; C-AFM; Methanol bromine etching; Cu-rich chalcopyrite; In2Se3; treatment; SOLAR-CELLS; EFFICIENCY; FILMS; ABSORBERS; GROWTH; MODEL;
D O I
10.1016/j.jallcom.2017.03.142
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The residual CuxSe phase results in shunt leakage paths in Cu-rich Cu(In,Ga)Se-2 (CIGS) which can cause serious degradation in the conversion efficiency. The conductive atom force microscopy(C-AFM) was employed to obtain a direct evidence of shunt leakage paths in the Cu-rich CIGS thin film. The results reveal that CuxSe phase exists not only near the surface but also inside the Cu-rich CIGS thin films. In order to eliminate the residual CuxSe, it is recommended to deposit a thin layer of In2Se3 on Cu-rich CIGS with subsequent annealing treatment In2Se3 treatment for short). The In2Se3 treatment can effectively remove CuxSe phase as well as the shunt leakage paths in Cu-rich CIGS thin films and improve the efficiency of Cu-rich CIGS based solar cells from 1.2% to 9.5%. (C) 2017 Published by Elsevier B.V.
引用
收藏
页码:31 / 35
页数:5
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