Effects of mechanical strain on the performance of amorphous silicon triple-junction solar cells

被引:12
作者
Jones, R [1 ]
Johnson, T [1 ]
Jordan, W [1 ]
Wagner, S [1 ]
Yang, J [1 ]
Guha, S [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词
D O I
10.1109/PVSC.2002.1190826
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Amorphous silicon triple-junction solar cells were tested in tension and compression. The production cells had the structure: stainless steel (125 mum)/Al/ZnO/n(1)i(1)p(1)n(2)i(2)p(2)n(3)i(3)p(3)/ITO/grid, where i(1) and i(2) are a-SiGe:H and i(3) is a-Si:H [2,3]. We bent the solar cells to strains as high as 2%. The I-V characteristics of the cells were tested before, during and after bending. We found that there was little deterioration in cell performance under compression up to 1.7% strain, which is the physical limit of our experiment. In tension, some cell characteristics began to degrade at strains of 0.75%. Plastic deformation was observed at strains of 0.2% and higher.
引用
收藏
页码:1214 / 1217
页数:4
相关论文
共 5 条
[1]   Failure resistance of amorphous silicon transistors under extreme in-plane strain [J].
Gleskova, H ;
Wagner, S ;
Suo, Z .
APPLIED PHYSICS LETTERS, 1999, 75 (19) :3011-3013
[2]   Electron mobility in amorphous silicon thin-film transistors under compressive strain [J].
Gleskova, H ;
Wagner, S .
APPLIED PHYSICS LETTERS, 2001, 79 (20) :3347-3349
[3]  
GUHA S, 1994, MATER RES SOC SYMP P, V336, P645, DOI 10.1557/PROC-336-645
[4]   Mechanics of rollable and foldable film-on-foil electronics [J].
Suo, Z ;
Ma, EY ;
Gleskova, H ;
Wagner, S .
APPLIED PHYSICS LETTERS, 1999, 74 (08) :1177-1179
[5]   Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies [J].
Yang, J ;
Banerjee, A ;
Guha, S .
APPLIED PHYSICS LETTERS, 1997, 70 (22) :2975-2977