IGBT gate drive circuit with in-built protection and immunity to transient fault

被引：0

作者：

Majumdar, B ^{[1
]}

Mukherjee, P ^{[1
]}

Talukdar, FA ^{[1
]}

Biswas, SK ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Elect Engn, Kolkata 700032, W Bengal, India

来源：

PROCEEDINGS OF IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY 2000, VOLS 1 AND 2 | 2000年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new gate drive circuit for efficient switching of IGBTs has been presented in this paper. This circuit contains a short circuit protection scheme by Limiting the IGBT fault current to a tower value through reduction of the IGBT gate voltage and thereby can distinguish a transient from an actual fault Apart from the short circuit protection, the circuit also protects the IGBT in case of over-temperature. This circuit does not have any speed-up capacitor, differentiating element or latching element, thus giving good immunity towards unwanted noise The oscillograms presented in this paper confirms satisfactory operation of this circuit.

引用

页码：615 / 620

页数：6

共 12 条

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