The step structure of the Si(557) surface

被引：33
作者：
Henzler, M
Zhachuk, R
机构：
[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Russian Acad Sci, Inst Semicond, Novosibirsk, Russia
来源：
THIN SOLID FILMS | 2003年 / 428卷 / 1-2期
关键词：
vicinal surface; low energy electron diffraction; lithographic method;
D O I：
10.1016/S0040-6090(02)01236-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The vicinal surfaces of silicon are prepared with very regular step structures. As a special feature some surfaces show regular structures with triple steps. The structure of the triple step, however, cannot be determined with STM due to the size of the tip. Therefore a kinematic low energy electron diffraction analysis has been made using the variation of the spot positions and intensities of a high number of diffraction spots with energy. It is shown, that the triple steps at the Si(5 5 7) surface have the orientation of the (1 13) face. This information is needed for description of the growth of other materials on top of the vicinal surface. 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：129 / 132
页数：4
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