Unexpected mode of plastic deformation in Cu damascene lines undergoing electromigration

被引:0
|
作者
Budiman, AS [1 ]
Tamura, N [1 ]
Valek, BC [1 ]
Gadre, K [1 ]
Maiz, J [1 ]
Spolenak, R [1 ]
Caldwell, WA [1 ]
Nix, WD [1 ]
Patel, JR [1 ]
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源
MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004 | 2004年 / 812卷
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An unexpected mode of plastic deformation was observed in damascene Cu interconnect test structure during an in-situ electromigration experiment and before the onset of visible microstructural damages (void, hillock formation). We show here, using a synchrotron technique of white beam X-ray microdiffraction, that the extent of this electromigration-induced plasticity is dependent on the line width. The grain texture of the line might also,play an important role. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. This early stage behavior can have a direct bearing on the final failure stage of electromigration.
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页码:345 / 350
页数:6
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