In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

被引：55

作者：

Wellmann, PJ

Bickermann, M

Hofmann, D

Kadinski, L

Selder, M

Straubinger, TL

Winnacker, A

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Inst Fluid Mech, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 216卷 / 1-4期

关键词：

SiC; physical vapor transport; X-ray imaging;

D O I：

10.1016/S0022-0248(00)00372-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using digital X-ray imaging we have investigated the on-going processes during physical vapor transport growth of SiC. A high-resolution and high-speed X-ray detector based on image plates and digital recording has been used to monitor SiC bulk crystal growth as well as SiC source material degradation on-line during growth. We have analyzed the shape of the growth interface and the evolution of the SIC source morphology. The crystal growth process will be discussed in terms of growth rate and limitations of the physical vapor transport of SIC gas species from the source to the growth interface, (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：263 / 272

页数：10

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