III-V interband 5.2 μm laser operating at 185 K

被引：31

作者：

Flatte, ME ^{[1
]}

Hasenberg, TC

Olesberg, JT

Anson, SA

Boggess, TF

Yan, C

McDaniel, DL

机构：

[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA

[2] Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

[3] Hughes Res Labs, Malibu, CA 90265 USA

[4] Univ Iowa, Dept Elect & Comp Engn, Iowa City, IA 52242 USA

[5] Boeing Def & Space Grp, Kirtland AFB, NM 87117 USA

[6] USAF, Phillips Lab, Kirtland AFB, NM 87117 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the operation of a III-V interband laser at a wavelength beyond 5 mu m and temperatures above 90 K. The active region consists of a strain compensated broken gap four layer superlattice of InAs/Ga0.6In0.4Sb/InAs/Al0.3Ga0.42In0.28As0.5Sb0.5 grown by molecular beam epitaxy. The maximum operating temperature under 2.01 mu m pulsed optical excitation was 185 K at a wavelength of 5.2 mu m, The peak pump intensity at the 80 K threshold was 62 kW/cm(2), and the characteristic temperature (T-0) of the threshold intensity was 37 K. This T-0 is comparable to the best observed values for 3-4.5 mu m lasers based on the InAs/GaInSb material system. (C) 1997 American Institute of Physics. [S0003-6951(97)04252-6].

引用

页码：3764 / 3766

页数：3

共 19 条

[1] Mid-infrared In1-xAlxSb/InSb heterostructure diode lasers [J].

Ashley, T ;

Elliott, CT ;

Jefferies, R ;

Johnson, AD ;

Pryce, GJ ;

White, AM ;

Carroll, M .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :931-933

[2] 175 K continuous wave operation of InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5 mu m [J].

Choi, HK ;

Turner, GW ;

Manfra, MJ ;

Connors, MK .

APPLIED PHYSICS LETTERS, 1996, 68 (21) :2936-2938

[3] High CW power (>200mW/facet) at 3.4 mu m from InAsSb/InAlAsSb strained quantum well diode lasers [J].

Choi, HK ;

Turner, GW ;

Manfra, MJ .

ELECTRONICS LETTERS, 1996, 32 (14) :1296-1297

[4] Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices [J].

Chow, DH ;

Miles, RH ;

Hasenberg, TC ;

Kost, AR ;

Zhang, YH ;

Dunlap, HL ;

West, L .

APPLIED PHYSICS LETTERS, 1995, 67 (25) :3700-3702

[5] Room temperature mid-infrared quantum cascade lasers [J].

Faist, J ;

Capasso, F ;

Sirtori, C ;

Sivco, DL ;

Hutchinson, AL ;

Cho, AY .

ELECTRONICS LETTERS, 1996, 32 (06) :560-561

[6] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[7] High power mid-infrared (lambda greater than or similar to-5 mu m) quantum cascade lasers operating above room temperature [J].

Faist, J ;

Capasso, F ;

Sirtori, C ;

Sivco, DL ;

Baillargeon, JN ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3680-3682

[8] High-temperature 4.5-mu m type-II quantum-well laser with Auger suppression [J].

Felix, CL ;

Meyer, JR ;

Vurgaftman, I ;

Lin, CH ;

Murry, SJ ;

Zhang, D ;

Pei, SS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (06) :734-736

[9] Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers [J].

Flatte, ME ;

Olesberg, JT ;

Anson, SA ;

Boggess, TF ;

Hasenberg, TC ;

Miles, TH ;

Grein, CH .

APPLIED PHYSICS LETTERS, 1997, 70 (24) :3212-3214

[10] THEORETICAL PERFORMANCE LIMITS OF 2.1-4.1 MU-M INAS/INGASB, HGCDTE, AND INGAASSB LASERS [J].

FLATTE, ME ;

GREIN, CH ;

EHRENREICH, H ;

MILES, RH ;

CRUZ, H .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) :4552-4559

← 1 2 →