Thermal stability of hydrogen-doped AZO thin films for photovoltaic applications

被引：11
|
作者：
Lee, Sooho [1 ]
Park, Yongseob [2 ]
Kim, Donguk [1 ]
Baek, Dohyun [1 ]
Yi, Junsin [1 ]
Hong, Byungyou [1 ]
Choi, Wonseok [3 ]
Lee, Jaehyeong [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea
[2] Chosun Coll Sci & Tech, Dept Photoelect Informat, Kwangju 501744, South Korea
[3] Hanbat Natl Univ, Dept Elect Engn, Taejon 305719, South Korea
来源：
MATERIALS RESEARCH BULLETIN | 2014年 / 58卷
关键词：
Oxides; Thin films; Sputtering; Optical properties; Electrical properties; ZINC-OXIDE; ZNO; TRANSPARENT; SEMICONDUCTORS; CONDUCTIVITY;
D O I：
10.1016/j.materresbull.2014.04.050
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Double doped zinc oxide films with aluminum and hydrogen were prepared by the radio frequency magnetron sputtering. The structural, electrical, and optical properties of the films were investigated in terms of the annealing conditions to study the thermal stability. The electrical resistivity was significantly increased when the films were annealed at higher temperature in air atmosphere. The optical transmittance of the films changed very little but the optical band gap was reduced. The grain in the film became larger while the degree of c-axis orientation was decreased by the heat treatment. Although the thermal stability of the double doped zinc oxide films was worse than that of the aluminum doped zinc oxide films, the efficiency of amorphous silicon thin films solar cells fabricated on double doped zinc oxide film was improved. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：126 / 131
页数：6
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