The study of ZnO film growth and the fabrication of ZnO-based thin film transistors

被引：0

作者：

Ma, X. M. ^{[1
]}

Yang, X. T. ^{[1
]}

Zhu, H. C. ^{[1
]}

Wang, C. ^{[1
]}

Gao, W. T. ^{[1
]}

Jin, H. ^{[1
]}

Qi, X. W. ^{[1
]}

Gao, B. ^{[1
]}

Fu, G. Z. ^{[1
]}

Jing, H. ^{[1
]}

Ma, K. ^{[1
]}

Chang, Y. C. ^{[1
]}

Du, G. T. ^{[1
]}

机构：

[1] Changchun Inst Opt Fine Mech & Phys, Changchun, Peoples R China

来源：

AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 | 2007年

关键词：

ZnO thin film; thin film transistor; MOCVD;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The ZnO films were deposited on the substrate of glass by MOCVD. The X-ray diffraction patterns of samples show sharp diffraction peaks ZnO (002) indicating the films were highly c-axis oriented. The devices based on the ZnO film were fabricated.

引用

页码：683 / 684

页数：2

共 11 条

[1] Optically pumped lasing of ZnO at room temperature
Bagnall, DM
Chen, YF
Zhu, Z
Yao, T
Koyama, S
Shen, MY
Goto, T
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
[2] COOK J, 1996, J ELECT MAT, V25, P855
[3] FARUQUE M, 2003, J APPL PHYS, V94
[4] HOFFMAN RL, 2003, APPL PHYS LETT, V82
[5] HOFFMANA RL, 2004, J APPL PHYS, V95
[6] TEXTURED ALUMINUM-DOPED ZINC-OXIDE THIN-FILMS FROM ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION
HU, JH
GORDON, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 880 - 890
[7] Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE
Iwata, K
Fons, P
Yamada, A
Matsubara, K
Niki, S
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 526 - 531
[8] KWAN C, 1980, J ELECTROCHEM SOC SO, V127, P1843
[9] MASUDA S, 2003, J APPL PHYS, V93
[10] Extremely transparent and conductive ZnO:Al thin films prepared by photo-assisted metalorganic chemical vapor deposition (photo-MOCVD) using AlCl3(6H(2)O) as new doping material
Myong, SY
Baik, SJ
Lee, CH
Cho, WY
Lim, KS
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8B): : L1078 - L1081

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