Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity

被引：34

作者：

Durnev, M. V. ^{[1
]}

Omelchenko, A. V. ^{[1
]}

Yakovlev, E. V. ^{[2
]}

Evstratov, I. Yu ^{[2
]}

Karpov, S. Yu ^{[2
]}

机构：

[1] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, RAS, St Petersburg 195220, Russia

[2] Soft Impact Ltd, STR Grp, St Petersburg 194156, Russia

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

关键词：

STRAINED WURTZITE SEMICONDUCTORS; ELECTRONIC-PROPERTIES;

D O I：

10.1063/1.3476344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium incorporation into strained InGaN coherently grown on a GaN substrate with arbitrary polarity is simulated using a simplified epitaxy model. The InGaN composition is predicted as a function of C-axis inclination angle. Effect of strain originated from the lattice mismatch on optical transitions in the bulk InGaN and quantum wells is examined with account of both complex valence band structure and polarization charges induced at the InGaN/GaN interfaces. A higher indium incorporation on nonpolar and semipolar planes, as compared to the ordinary C-plane, is found to not necessarily result in a longer emission wavelength. (C) 2010 American Institute of Physics. [doi:10.1063/1.3476344]

引用

页数：3

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